DFB LD

1490nmDFB 激光器芯片

Description概述
The GA-122B01 is a semiconductor InGaAsP DFB laser working at the 1490nm wavelength range. GA-122B01 is an uncooled, 2.5Gbps, 1490nm DFB-LD chips with MQW structure. This high performance, and high reliability laser is suitable for applications up to 2.5 Gbps in Optical fiber communication,including OC-24 and OC-48 applications.
GA-122B01是一种不带制冷器使用的半导体InGaAsP DFB激光器,波长范围为1490nm。1490nm DFB-LD芯片具有MQW结构。该高性能、高可靠性的激光器适用于高达2.5 Gbps的光纤通信应用,包括OC-24和OC-48应用。
 
2.Features主要特性
  • Low threshold current低阈值电流
  • 1490nm typical emission wavelength 1490nm典型发射波长
  • Uncooled DFB-LD chips with MQW structure具有MQW结构不带制冷器使用的DFB-LD芯片
  • Data rate up to 2.5Gbps数据传输速度高达2.5Gbps
  • Wide temperature range available(-20℃to 85℃)可在大范围温度下工作(-20℃至85℃)
 
3.Application应用
  • SONET/SDH OC-3/STM-1 OC-12/STM-4 OC48/STM-16
  • Gigabit Ethernet千兆以太网
  • Fiber Channel光钎通道
 
4. Absolute maximum ratings绝对最大额定值
Parameter参数 Symbol符号 Ratings额定值 Unit单位
Light output power光输出功率 Po 20 mW
Forward Current正向电流 If 150 mA
Laser Reverse Voltage激光器反向电压 VRL 2 V
Operation temperature工作温度 To -20 ~ +85 ºC
Storage temperature存储温度 Tstg -40 ~ +100 ºC
 
5. Electrical/optical characteristics ( T=25℃ )电气/光学发特性(温度为25℃)
Parameter参数 Symbol符号 Test Conditions
测试环境
Min
最小值
Typ
典型值
Max
最大值
Unit
单位
Threshold Current阈值电流 Ith 25ºC --- 7 12 mA
85ºC --- --- 35
Slope Efficiency斜效率 SE Ith+20mA,T=25ºC 0.25 0.28 --- mW/mA
Ith+20mA,T=85ºC 0.15 --- ---
Output Power输出功率 Po Ith+20mA,T=25ºC 5 5.6 --- mW
Ith+20mA,T=85ºC 3 --- ---
Operating Voltage工作电压 Vop Ith+20mA --- 1.35 1.87 V
Center Wavelength中心波长 λc Po=5mW 1480 1490 1500 Nm
Side mode suppression ratio
边模抑制比
SMSR Po=5mW,T= 25ºC 35 40 --- dB
Rise and Fall time
上升及下降时间
tr,tf Ib=Ith, 20-80% --- --- 0.15 Ns
Parallel divergence Angle
平行发散角
θ// Po=5mW --- 24 --- Deg.
Perpendicular divergence Angle垂直发散角 θ Po=5mW --- 27 --- Deg.
 
6. Outline drawings & Pin connection type产品结构图&管脚PIN连接类型

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